AIN ceramic substrate

AIN ceramic substrate

Aluminum nitride AIN substrate is a type of functional ceramic and is a diamond-like nitride. The aluminum nitride substrate produced by the company has excellent thermal, mechanical and electrical properties, thermal conductivity is greater than 170W/(m•K), dielectric constant is approximately 8 at 1MHz, thermal expansion coefficient is 4.5×10-6/°C, volume The resistivity is greater than 10EE12Ω•m, and the density is 3.26g/cm3. At the same time, it has the characteristics of non-toxicity and high specific strength. Aluminum nitride has excellent thermal conductivity (5-10 times that of alumina ceramics), low dielectric constant and dielectric loss, reliable insulation properties, excellent mechanical properties, non-toxicity, high temperature resistance, chemical resistance, And similar to the thermal expansion coefficient of silicon, with the rapid development of microelectronic devices, high thermal conductivity aluminum nitride substrates are widely used in communication devices, high-brightness LEDs, power electronics and other industries, and are excellent electronic ceramic materials. Our company can produce various size and shape products according to customer requirements.

Materials

Al2O3

AlN

ZrO2

96%

99.6%

Color

White

White

Gray

White

Density (g/cm 3 )

3.72

3.85

3.3

6.04

Thermal conductivity (W/m. K)

22.3

29.5

160 -190

2.4

Thermal Expansion (x10 -6 / o C)

8.0

8.2

4.6

10

Dielectric strength

14E6

18E6

14E6

 

Dielectric Constant (at 1MHZ)

9.5

9.8

8.7

29

Loss Tangent (x10 -4 @1MHZ)

3

2

5

1E-3

Volume Resistivity (ohm-m)

>10 14

>10 14

>10 14

 

Flexural Strength (N/mm 2 )

350

500

450

 

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